Extraction of noise parameters of transistor using a spectrum analyser and 50/spl Omega/ noise figur - Electronics Letters
نویسندگان
چکیده
‘Second harmonic power generation from GaAs-IMPATT diodes at 210GHz’, Int. J. Infrared Millim. Wuves, 1998, 19, (4), pp. 587593 EISELE, H.: ‘Efficient second-harmonic power extraction from GaAs TUNNETT diodes above 200GHz’, Electron. Lett., 1998, 34, (13), pp. 1324-1326 LIEBIG, D., and SCHUNEMANN, K.: ‘Cellular automaton particle simulation and sensitivity analysis of GaAs-MITATT-diodes for operation at 200GHz’, Int. J, Electron. Commun. (AEU), 1998, 52, ( 5 ) , pp. 329-334 GAUL, L., and CLAASSEN, M.: ‘Pulsed high-power operation of p+pnn+-avalanche diodes near avalanche resonance for mm-wave oscillators’, IEEE Trans., 1994, ED-41, (8), pp. 1310-1318 FREYER, J . , TSCHERNITZ, M., GROTHE, H., and HARTH, w.: ‘GaAs transit time devices for frequencies above 140GHz’. Proc. 3rd Int. Workshop on Terahertz Electronics, Zermatt, Switzerland, 1995, pp. 17-26 BENZ, c., and FREYER, J . : ‘Pulsed GaAs-IMPATT oscillator up to 200GHz’. Proc. 23rd Int. Conf. Infrared and Millimeter Waves, Colchester, UK, 1998, pp. 34-36 BAUER, T., and FREYER, J.: ‘Steady-state simulation of mm-wave multiple device oscillators’. Proc. Int. Workshop on Millimeter Waves, Orvieto, Italy, 1996, pp. 145-147
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